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| KSC5801 KSC5801 High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) * * * * High Breakdown Voltage : BVCBO=1500V High Speed Switching : tF=0.1s (Typ.) Wide S.O.A For C-Monitor (48KHz) & C-TV (~21") B Equivalent Circuit C 1 50 typ. E TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 1500 800 6 8 16 50 150 - 55 ~ 150 Units V V V A A W C C Electrical Characteristics TC=25C unless otherwise noted Symbol ICES ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VF tF Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Fall Time Test Condition VCE = 1400V, VBE = 0 VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1.0A VCE = 5V, IC = 5.0A IC = 5A, IB = 1.2A IC = 5A, IB = 1.2A IF = 6A VCC = 200V, IC = 4A IB1 = 0.8A, IB2 = -1.6A RL = 50 40 10 4 Min. Typ. Max. 1 10 250 30 7 5 1.5 2 0.2 V V V s Units V mA mA hermal Characteristics TC=25C unless otherwise noted Symbol RjC Item Thermal Resistance, Junction to Case Max 2.5 Unit C/W (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5801 Typical Characteristics 10 9 100 VCE = 5V IC[A], COLLECTOR CURRENT 8 7 6 5 4 3 2 1 0 0 1 0.1 IB = 2.0A 1.8A 1.6A 1.4A 1.2A 1.0A 0.8A 0.6A 0.4A IB = 0.2A hFE, DC CURRENT GAIN 125 C 75 C 25 C -25 C 125 C O O O O O 10 -25 C O 1 2 3 4 5 6 7 8 9 10 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 2 VBE(sat)[V], BASE-EMITTER VOLTAGE VBE(sat)[mV], SATURATION VOLTAGE IC = 5IB IC = 3IB 1 1 Tj = -25 C Tj = 125 C Tj = +25 C O O O -25 C 25 C 75 C 125 C O O O O 0.1 1E-3 0.4 0.01 0.1 1 10 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Sautration Voltage 2 10 VBE(sat)[mV], SATURATION VOLTAGE IC = 5IB IC[A], COLLECTOR CURRENT 8 VCE = 5V 1 6 -25 C 25 C 75 C 125 C 0.4 0.1 1 10 O O O O 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter Sautration Voltage Figure 6. Base-Emitter On Voltage (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5801 Typical Characteristics (Continued) 8 1.0 tSTG[S], STORAGE TIME 0.8 6 tF[S], FALL TIME 0.6 IC = 2.0A 4 IC = 3.0A IC = 2.5A IC = 2.0A 0.4 IC = 2.5A 2 0.2 IC = 3.0A 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 dIB/dt[A/S], BASE CURRETN GRADIENT dIB/dt[A/S], BASE CURRETN GRADIENT Figure 7. Switching Characteristic Figure 8. Switching Characteristic 5 0.8 tSTG[S], STORAGE TIME 4 IC = 2.5A 0.6 3 tF[S], FALL TIME IC = 3.0A IC = 3.0A 0.4 IC = 2.5A IC = 2.0A 2 IC = 2.0A 0.2 1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 dI B/dt[A/S], BASE CURRETN GRADIENT dIB/dt[A/S], BASE CURRETN GRADIENT Figure 9. Switching Characteristic Figure 10. Switching Characteristic 100 100 SINGLE PULSE IC max(Pulse) TC=25 C 100s 10 O IC = 5IB1 = -5IB2 L = 500H SINGLE PULSE IC[A], COLLECTOR CURRENT IC max(DC) DC 1 10ms 1ms 300s IC[A], COLLECTOR CURRENT 10 IB2 = -1A Const 1 0.1 0.01 1 10 100 1000 0.1 2000 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 11. Safe Operating Area Figure 12. Reverse Bias Safe Operating Area (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5801 Typical Characteristics (Continued) 80 70 PC[W], POWER DISSIPATION 60 50 40 30 20 10 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 13. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5801 Package Demensions TO-3PF 5.50 0.20 4.50 0.20 15.50 0.20 o3.60 0.20 3.00 0.20 (1.50) 10.00 0.20 10 26.50 0.20 23.00 0.20 16.50 0.20 14.50 0.20 0.85 0.03 16.50 0.20 2.00 0.20 14.80 0.20 2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10 +0.20 2.00 0.20 2.50 0.20 2.00 0.20 3.30 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.90 -0.10 +0.20 3.30 0.20 2.00 0.20 5.50 0.20 1.50 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 22.00 0.20 KSC5801 Package Demensions TO-3PF 5.50 0.20 4.50 0.20 15.50 0.20 o3.60 0.20 3.00 0.20 (1.50) 10.00 0.20 10 26.50 0.20 23.00 0.20 16.50 0.20 14.50 0.20 0.85 0.03 16.50 0.20 2.00 0.20 14.80 0.20 2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10 +0.20 2.00 0.20 2.50 0.20 2.00 0.20 3.30 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.90 -0.10 +0.20 3.30 0.20 2.00 0.20 5.50 0.20 1.50 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 22.00 0.20 |
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